Takeaki Hamada

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Speaker, Author, Co-Author

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P4 (BP)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

9:30 AM - 11:30 AM

[16a-P4-16] V/III ratio dependence of electrical properties of drift layer growth in a vertical device of GaN layer on Si substrate

〇Takeaki Hamada¹, Yuya Urayama¹, Suguru Mase¹, Keisuke Nakamura¹, Takashi Egawa¹ (1.Nagoya Inst. Tech)