Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P4 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[16a-P4-1] Annealing of hydrogen-ion-implanted n-GaN

〇Ken Iyoda¹, Kouta Takabayashi¹, Yutaka Tokuda¹, Shiojima Kenji², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Tech., 2.University of Fukui., 3.S.H.I. Examination & Inspection,Ltd.)

9:30 AM - 11:30 AM

[16a-P4-2] DLTS studies of traps in MOCVDp⁺⁺p^-n⁺GaN on GaN substrate

〇(B)Tatsuya Kogiso¹, Shougo Ueda¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs.,Inc., 3.Nagoya University)

9:30 AM - 11:30 AM

[16a-P4-3] Electrical Characterization of p-GaN Film Homo-Epitaxially Grown on Free-Standing GaN Substrate

〇Yoshitaka Nakano¹ (1.Chubu Univ.)

9:30 AM - 11:30 AM

[16a-P4-4] C-V profile analysis of plasma-induced defects in GaN (2)

〇Ryouhei Inoue¹, Yusaku Wakasugi¹, Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

9:30 AM - 11:30 AM

[16a-P4-5] Mapping of interfacial reaction of Ni/n-GaN Schottky contacts using scanning internal photoemission microscopy

〇Yuki Koketsu¹, Kenji Shiojima¹ (1.Univ. of Fukui)

9:30 AM - 11:30 AM

[16a-P4-6] Mapping of degradation of AlGaN/GaN MIS-HEMTs using scanning internal photoemission microscopy

Shingo Murase¹, Watamura Yo², Tetsuya Suemitsu², 〇Kenji Shiojima¹ (1.Univ. of Fukui, 2.Tohoku Univ.)

9:30 AM - 11:30 AM

[16a-P4-7] Low-temperature formation of ohmic contacts to p-type GaN using Ti system

〇Masayasu Takahashi¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

9:30 AM - 11:30 AM

△ [16a-P4-8] Deposition and characterization of silicon dioxide film formed by surface-wave plasma enhanced chemical vapor deposition

〇Makoto Baba¹, Kondo Yutaka¹, Okada Hiroshi^2,1, Furukawa Masakazu³, Yamane Keisuke¹, Sekiguchi Hiroto¹, Wakahara Akihiro^1,2 (1.Toyohashi Univ.Tech, 2.EIIRIS, 3.ARLC)

9:30 AM - 11:30 AM

[16a-P4-9] Influence of Surface Treatment for SiO₂/n-GaN Interfaces before Deposition

〇Takuya Akano¹, Mutsunori Uenuma¹, Yuta Tominaga¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

9:30 AM - 11:30 AM

△ [16a-P4-10] Effects of GaN-cap on C-V characteristics of AlGaN/GaN MOS structures

〇Kenya Nishiguchi¹, Syouta Kaneki¹, Tamotsu Hashizume¹ (1.RCIQE)

9:30 AM - 11:30 AM

[16a-P4-11] Change of GaN Schottky barrier height by insertion of ultrathin Al₂O₃ layers

〇(M1)Taito Hasezaki¹, Masamiti Akazawa¹ (1.RCIQE,Hokkaido Univ.)

9:30 AM - 11:30 AM

[16a-P4-12] Properties of SiO₂/InAlN interface with Al₂O₃ ultrathin interlayers
— Al₂O₃ thickness dependence —

〇(M2)atsushi seino¹, Masamichi Akazawa¹ (1.RCIQE,Hokkaido Univ.)

9:30 AM - 11:30 AM

[16a-P4-13] Surface Stabilization of AlGaN/GaN HEMT by Plasma Enhanced Atomic Layer Deposited SiN_x Film with HCl Surface Treatment

〇TAKAYUKI SUZUKI¹, KOSUKE TSUCHIYA¹, TAKAHIRO OHBO¹, YOSHIHIKO AKAZAWA¹, TAKASHI SHIMONO¹, KOTA MATSUMOTO¹, TAKUYA EGUCHI¹, NAOTAKA IWATA¹ (1.Toyota Tech. Inst.)

9:30 AM - 11:30 AM

[16a-P4-14] SiO₂-MOSFETs on the undoped GaN epi-layer

〇Katsunori Ueno¹, Shinya Takashima¹, Takuro Inamoto¹, Hideaki Matsuyama¹, Masaharu Edo¹, Tokio Takahashi³, Mitsuaki Shimizu³, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi, 3.AIST)

9:30 AM - 11:30 AM

[16a-P4-15] Enhanced mobility of InAlN/AlGaN HFETs by improving heterointerface roughness

〇Daiki Hosomi¹, Yuta Miyachi¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Nitech)

9:30 AM - 11:30 AM

[16a-P4-16] V/III ratio dependence of electrical properties of drift layer growth in a vertical device of GaN layer on Si substrate

〇Takeaki Hamada¹, Yuya Urayama¹, Suguru Mase¹, Keisuke Nakamura¹, Takashi Egawa¹ (1.Nagoya Inst. Tech)

9:30 AM - 11:30 AM

[16a-P4-17] Fully vertical GaN p-n diode on Si substrate

〇Suguru Mase¹, Yuya Urayama¹, Takeaki Hamada¹, Takashi Egawa¹ (1.Nagoya Inst. Tech.)

9:30 AM - 11:30 AM

[16a-P4-18] Temperature dependence of vertical leakage current in AlGaN/GaN high-electron-mobility transistor on Si substrates

〇Hayato Kimura¹, Yuya Yamaoka^1,2, Ken Kakamu¹, Takashi Egawa¹ (1.Nagoya Inst.Tech, 2.Taiyo Nippon Sanso Corp.)

9:30 AM - 11:30 AM

[16a-P4-19] The relationship between the vertical-direction leakage current of AlN on Si substrate and the type of dislocation in AlN layer

〇yuya yamaoka^1,2, Ken Kakamu², Akinori Ubukata¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Takashi Egawa² (1.Taiyo Nippon Sanso Corp., 2.Nagoya Inst. of Tech.)

9:30 AM - 11:30 AM

[16a-P4-20] Electrical properties of GaN vertical pn-diode structure with Mg ion implantation

〇Shinya Takashima¹, Katsunori Ueno¹, Takuro Inamoto¹, Masaharu Edo¹, Tokio Takahashi², Mitsuaki Shimizu² (1.Fuji Electric, 2.AIST)

9:30 AM - 11:30 AM

[16a-P4-21] Recovery Current Characteristics of Diode Mode Operation in GaN GIT Bi-directional Switch

〇Toshihide Ide¹, Mitsuaki Shimizu¹, Xu-Qiang Shen¹, Hidetoshi Ishida², Masahiro Ishida², Tetsuzo Ueda² (1.AIST ADPERC, 2.Panasonic Corp.)

9:30 AM - 11:30 AM

[16a-P4-22] 1200 V GaN Polarization Super Junction (PSJ) Diode on Sapphire

〇Shuichi Yagi¹, Shoko Hirata¹, Takeru Saito¹, Yusuke Kamiyama¹, Fumihiko Nakamura¹, Hiroji Kawai¹, Atsushi Tanaka², Yoshio Honda², Hiroshi Amano² (1.POWDEC, 2.Nagoya Univ. IMaSS)

9:30 AM - 11:30 AM

[16a-P4-23] 1200 V / 100 A Class Module using GaN Polarization Super Junction (PSJ) FET on Sapphire

〇Shuichi Yagi¹, Shoko Hirata¹, Takeru Saito¹, Yusuke Kamiyama¹, Fumihiko Nakamura¹, Hiroji Kawai¹, Atsushi Tanaka², Yoshio Honda², Hiroshi Amano² (1.POWDEC, 2.Nagoya Univ. IMaSS)

9:30 AM - 11:30 AM

[16a-P4-24] Down Converter using GaN Polarization Super Junction (PSJ) Devices on Sapphire

〇Yusuke Kamiyama¹, Shoko Hirata¹, Takeru Saito¹, Fumihiko Nakamura¹, Shuichi Yagi¹, Hiroji Kawai¹, Atsushi Tanaka³, Yoshio Honda³, Hiroshi Amano^2,3 (1.POWDEC, 2.Nagoya Univ., 3.CIRFE)

9:30 AM - 11:30 AM

[16a-P4-25] Evaluation of the Bistability of GaN/AlN Resonant Tunneling Diodes toward Nonvolatile Memory Application

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

9:30 AM - 11:30 AM

[16a-P4-26] Electrical characteristics across GaAs/GaN heterojunctions on Si substrate (2)

〇shoji yamajo¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

9:30 AM - 11:30 AM

[16a-P4-27] Electron transport properties of InSb/Ga_0.35In_0.65Sb composite channel structure

〇(B)Takuya Iwaki¹, Yoshiaki Harada¹, Jun Takeuchi¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of science)

9:30 AM - 11:30 AM

△ [16a-P4-28] Influence of slant field plates on electron velocity in InGaAs-HEMTs

〇TOMOTAKA HOSOTANI¹, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC, Tohoku Univ.)

9:30 AM - 11:30 AM

[16a-P4-29] Study on metal residual stress effects for electrical characteristics of GaN HEMTs
by using device simulation

〇Toshiyuki Oishi¹, Yutaro Yamaguchi², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)

Session information

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-1] Annealing of hydrogen-ion-implanted n-GaN

[16a-P4-2] DLTS studies of traps in MOCVDp⁺⁺p^-n⁺GaN on GaN substrate

[16a-P4-3] Electrical Characterization of p-GaN Film Homo-Epitaxially Grown on Free-Standing GaN Substrate

[16a-P4-4] C-V profile analysis of plasma-induced defects in GaN (2)

[16a-P4-5] Mapping of interfacial reaction of Ni/n-GaN Schottky contacts using scanning internal photoemission microscopy

[16a-P4-6] Mapping of degradation of AlGaN/GaN MIS-HEMTs using scanning internal photoemission microscopy

[16a-P4-7] Low-temperature formation of ohmic contacts to p-type GaN using Ti system

△ [16a-P4-8] Deposition and characterization of silicon dioxide film formed by surface-wave plasma enhanced chemical vapor deposition

[16a-P4-9] Influence of Surface Treatment for SiO₂/n-GaN Interfaces before Deposition

△ [16a-P4-10] Effects of GaN-cap on C-V characteristics of AlGaN/GaN MOS structures

[16a-P4-11] Change of GaN Schottky barrier height by insertion of ultrathin Al₂O₃ layers

[16a-P4-12] Properties of SiO₂/InAlN interface with Al₂O₃ ultrathin interlayers
— Al₂O₃ thickness dependence —

[16a-P4-13] Surface Stabilization of AlGaN/GaN HEMT by Plasma Enhanced Atomic Layer Deposited SiN_x Film with HCl Surface Treatment

[16a-P4-14] SiO₂-MOSFETs on the undoped GaN epi-layer

[16a-P4-15] Enhanced mobility of InAlN/AlGaN HFETs by improving heterointerface roughness

[16a-P4-16] V/III ratio dependence of electrical properties of drift layer growth in a vertical device of GaN layer on Si substrate

[16a-P4-17] Fully vertical GaN p-n diode on Si substrate

[16a-P4-18] Temperature dependence of vertical leakage current in AlGaN/GaN high-electron-mobility transistor on Si substrates

[16a-P4-19] The relationship between the vertical-direction leakage current of AlN on Si substrate and the type of dislocation in AlN layer

[16a-P4-20] Electrical properties of GaN vertical pn-diode structure with Mg ion implantation

[16a-P4-21] Recovery Current Characteristics of Diode Mode Operation in GaN GIT Bi-directional Switch

[16a-P4-22] 1200 V GaN Polarization Super Junction (PSJ) Diode on Sapphire

[16a-P4-23] 1200 V / 100 A Class Module using GaN Polarization Super Junction (PSJ) FET on Sapphire

[16a-P4-24] Down Converter using GaN Polarization Super Junction (PSJ) Devices on Sapphire

[16a-P4-25] Evaluation of the Bistability of GaN/AlN Resonant Tunneling Diodes toward Nonvolatile Memory Application

[16a-P4-26] Electrical characteristics across GaAs/GaN heterojunctions on Si substrate (2)

[16a-P4-27] Electron transport properties of InSb/Ga_0.35In_0.65Sb composite channel structure

△ [16a-P4-28] Influence of slant field plates on electron velocity in InGaAs-HEMTs

[16a-P4-29] Study on metal residual stress effects for electrical characteristics of GaN HEMTs
by using device simulation

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