Taito Hasezaki

→ Search for Taito Hasezaki in Google Scholar

Speaker, Author, Co-Author

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P4 (BP)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

9:30 AM - 11:30 AM

[16a-P4-11] Change of GaN Schottky barrier height by insertion of ultrathin Al₂O₃ layers

〇(M1)Taito Hasezaki¹, Masamiti Akazawa¹ (1.RCIQE,Hokkaido Univ.)