Toshiyuki Oishi

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Speaker, Author, Co-Author

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P4 (BP)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

9:30 AM - 11:30 AM

[16a-P4-29] Study on metal residual stress effects for electrical characteristics of GaN HEMTs
by using device simulation

〇Toshiyuki Oishi¹, Yutaro Yamaguchi², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)