[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-29] Study on metal residual stress effects for electrical characteristics of GaN HEMTs
by using device simulation

〇Toshiyuki Oishi¹, Yutaro Yamaguchi², Koji Yamanaka² (1.Saga Univ., 2.Mitsubishi Electric)

Keywords:GaN HEMT