[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-25] Evaluation of the Bistability of GaN/AlN Resonant Tunneling Diodes toward Nonvolatile Memory Application

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:nitride semiconductor, nonvolatile memory, intersubband transition

The bistability of GaN/AlN resonant tunneling diodes (RTDs) was investigated to realize a high-speed nonvolatile memory operating at a picosecond time scale. Highly-reproducible write–erase memory operation and long-time storage of data were successfully realized using the bistability of GaN/AlN RTDs based on the intersubband transitions and electron accumulation in quantum well.