Electron transport properties of InSb/Ga<sub>0.35</sub>In<sub>0.65</sub>Sb composite channel structure

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P4 (BP)

9:30 AM - 11:30 AM

〇(B)Takuya Iwaki¹, Yoshiaki Harada¹, Jun Takeuchi¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of science)

Keywords:HEMT, MBE