[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-3] Electrical Characterization of p-GaN Film Homo-Epitaxially Grown on Free-Standing GaN Substrate

〇Yoshitaka Nakano¹ (1.Chubu Univ.)

Keywords:p-GaN, deep-level defects, steady-state photo-capacitance spectroscopy

We have electrically investigated deep-level defects in p-type GaN:Mg films homo-epitaxially grown on free-standing GaN substrates by MOCVD, employing a steady-state photo-capacitance spectroscopy technique. Some kinds of deep-level defects were found to be located at 1.80, 2.48, and 3.18eV above the valence band and at 3.08 and 3.28eV below the conduction band.