[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-5] Mapping of interfacial reaction of Ni/n-GaN Schottky contacts using scanning internal photoemission microscopy

〇Yuki Koketsu¹, Kenji Shiojima¹ (1.Univ. of Fukui)

Keywords:n-GaN, SIPM, Schottky contact

We have developed scanning internal photoemission microscopy to characterize the electrical characteristics of metal semiconductor interfaces. In this study, we demonstrated to characterize interfacial reaction of Ni/n-GaN contacts. Up to annealing at 500 °C, rectification was good and Y maps were uniformity in the entire electrode. After annealing at 600 °C, rectification lost and the photocurrent was not detected.