[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-6] Mapping of degradation of AlGaN/GaN MIS-HEMTs using scanning internal photoemission microscopy

Shingo Murase¹, Watamura Yo², Tetsuya Suemitsu², 〇Kenji Shiojima¹ (1.Univ. of Fukui, 2.Tohoku Univ.)

Keywords:AlGaN/GaN MIS-HEMT, SIPM, Schottky contact

We have applied SIPM to characterize degradation of AlGaN/GaN MIS-HEMT. After applying a voltage stress of 20 V, we found degraded spots at the edge of the gate electrode on the drain side in the SIPM image.