[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-7] Low-temperature formation of ohmic contacts to p-type GaN using Ti system

〇Masayasu Takahashi¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

Keywords:p-type GaN