[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-9] Recovery of electrical properties of SiC MOSFETs due to gamma-ray irradiation under high temperature condition

〇Akinori Takeyama¹, Takuma Matsuda^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino¹, Shinobu Onoda¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

Keywords:SiC, MOSFET, gamma-ray irradiation