Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P5 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[16a-P5-1] Effects of Temperature Differences in Seeding on Crystal Quality in Solution Growth of SiC

〇Naomichi Tsuchimoto¹, Hodaka Kutsukake¹, Koki Suzuki¹, Masaru Takahashi¹, Koangyoung Hyun¹, Toshinori Taishi¹ (1.Shinshu Univ.)

9:30 AM - 11:30 AM

[16a-P5-2] Detection of damaged layers induced during CMP process and linkage analyses of the structure of the damaged layer by MPJ, SEM, AFM, and FIB-STEM

〇Toshiyuki Isshiki¹, Takahiro Sato², Masaki Hasegawa², Atsushi Miyaki², Masato Iyoki², Takehiro Yamaoka², Katsunori Onuki², Kobayashi Kenji² (1.Kyoto Inst. Tech., 2.Hitachi Hightech.)

9:30 AM - 11:30 AM

[16a-P5-3] Dislocation dynamics simulation for shapes of expansion of stacking faults under REDG

〇Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹, Akihiro Goryu², Kenji Hirohata² (1.Univ. of Tokyo, 2.Toshiba R&D Center)

9:30 AM - 11:30 AM

[16a-P5-4] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diode

〇SHOHEI HAYASHI^1,2, TAMOTSU YAMASHITA^1,3, SENZAKI JUNJI¹, MIYAZATO MASAKI^1,4, RYO MINA^1,4, MASAAKI MIYAJIMA^1,4, YOSHIYUKI YONEZAWA¹, TOMOHISA KATO¹, KAZUTOSHI KOJIMA¹, HAJIME OKUMURA¹ (1.AIST, 2.Toray Research Center Inc., 3.SHOWA DENKO K.K., 4.Fuji Electric Co. Ltd.)

9:30 AM - 11:30 AM

[16a-P5-5] Ti-Si-C Ohmic contact formation by laser annealing on n⁺ 4H-SiC C face

〇Desilva Milantha¹, Teruhisa Kawasaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Sumitomo Heavy Industries Ltd.)

9:30 AM - 11:30 AM

[16a-P5-6] Improvements of 4H-SiC MOS interface with barium

〇Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec Semiconductor)

9:30 AM - 11:30 AM

[16a-P5-7] Effects of surface etching with CF₄on 4H-SiC MOS Capacitors

〇(B)Kiichi Kobayakawa¹, Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^2,1, Tomonori Maeda^2,1, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec)

9:30 AM - 11:30 AM

[16a-P5-8] Bias Dependence of Heavy-Ion-Induce Charge Collected from SiC MOSFET

〇Takahiro MAKINO¹, Shuhei TAKANO^1,2, Shinsuke HARADA³, Kazutoshi KOJIMA³, Yasuto HIJIKATA², Takeshi OHSHIMA¹ (1.QST, 2.Saitama Univ., 3.AIST)

9:30 AM - 11:30 AM

[16a-P5-9] Recovery of electrical properties of SiC MOSFETs due to gamma-ray irradiation under high temperature condition

〇Akinori Takeyama¹, Takuma Matsuda^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino¹, Shinobu Onoda¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

9:30 AM - 11:30 AM

[16a-P5-10] Non-uniform layer near thermal SiO₂/SiC interface and its impact on the leakage characteristics

〇Ryu Nagai¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Univ. of Tsukuba)

9:30 AM - 11:30 AM

[16a-P5-11] Difference between dry-oxide and nitrided SiC-MOS interfaces studied by electrically-detected-magnetic-resonance (EDMR) spectroscopy

〇Takahide Umeda¹, Geonwoo Kim¹, Hironori Yoshioka², Ryouji Kosugi², Shinsuke Harada² (1.Univ. of Tsukuba, 2.AIST)

9:30 AM - 11:30 AM

[16a-P5-12] An analysis of in-plane defect distribution of carbon-related defects in dry-oxide C-face 4H-SiC MOSFET

〇Yohei Kagoyama¹, Mitsuo Okamoto², Hironori Yoshioka², Shinsuke Harada², Takahiro Yamasaki³, Takahisa Ohno³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

9:30 AM - 11:30 AM

[16a-P5-13] Electron-spin-resonance observations on dry-oxide, nitrided, and POCl₃-annealed 4H-SiC/SiO₂ interfaces

〇(M2)Geonwoo Kim¹, Takafumi Okuda², Jun Suda², Tsunenobu Kimoto², Mitsuo Okamoto³, Shinsuke Harada³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST)

9:30 AM - 11:30 AM

[16a-P5-14] Modeling of Busbar Skin Effects in Turn-Off Conditions

〇Koichi Fukuda¹, Junichi Hattori¹, Yoshihiro Sato¹, Hiroshi Sato¹, Hiroshi Yamaguchi¹ (1.AIST)

9:30 AM - 11:30 AM

[16a-P5-15] Integrated Degradation Analysis for SiC Die Attachment Systems subjected to Thermal Cycle Test

〇Mari Yamshita¹, Tatsuhiro Suzuki¹, Sawa Araki¹, Tetsuya Mori¹, Takashi Ogihara², Hidekazu Tanaka², Hisashi Yakumaru³, Satoshi Tanimoto¹ (1.NISSAN ARC, Ltd, 2.Tektronix/Keithley Japan, 3.Hitachi Power Solutions)

Session information

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1] Effects of Temperature Differences in Seeding on Crystal Quality in Solution Growth of SiC

[16a-P5-2] Detection of damaged layers induced during CMP process and linkage analyses of the structure of the damaged layer by MPJ, SEM, AFM, and FIB-STEM

[16a-P5-3] Dislocation dynamics simulation for shapes of expansion of stacking faults under REDG

[16a-P5-4] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diode

[16a-P5-5] Ti-Si-C Ohmic contact formation by laser annealing on n⁺ 4H-SiC C face

[16a-P5-6] Improvements of 4H-SiC MOS interface with barium

[16a-P5-7] Effects of surface etching with CF₄on 4H-SiC MOS Capacitors

[16a-P5-8] Bias Dependence of Heavy-Ion-Induce Charge Collected from SiC MOSFET

[16a-P5-9] Recovery of electrical properties of SiC MOSFETs due to gamma-ray irradiation under high temperature condition

[16a-P5-10] Non-uniform layer near thermal SiO₂/SiC interface and its impact on the leakage characteristics

[16a-P5-11] Difference between dry-oxide and nitrided SiC-MOS interfaces studied by electrically-detected-magnetic-resonance (EDMR) spectroscopy

[16a-P5-12] An analysis of in-plane defect distribution of carbon-related defects in dry-oxide C-face 4H-SiC MOSFET

[16a-P5-13] Electron-spin-resonance observations on dry-oxide, nitrided, and POCl₃-annealed 4H-SiC/SiO₂ interfaces

[16a-P5-14] Modeling of Busbar Skin Effects in Turn-Off Conditions

[16a-P5-15] Integrated Degradation Analysis for SiC Die Attachment Systems subjected to Thermal Cycle Test

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