[16p-211-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

[16p-211-15] Mechanism of potential-induced degradation for heterojunction c-Si PV modules

Chizuko Yamamoto¹, Seira Yamaguchi², Keisuke Ohdaira², 〇Atsushi Masuda¹ (1.AIST, 2.JAIST)

Keywords:photovoltaic module, potential-induced degradation, heterojunction

Potential-induced degradation (PID) for heterojunction crystalline silicon photovoltaic modules is characterized by a decrease in short-circuit current mainly originating from reduction in transparent conducting oxide. PID test for long duration also induces a decrease in open-circuit voltage.