[16p-211-1~18] 16.3 Bulk, thin-film and other silicon-based solar cells

[16p-211-16] Effects of PID on hygrothermal degradation for crystalline Si photoboltaic modules

〇Yasushi Tachibana¹, Takeshi Toyoda¹, Toshiharu Minamikawa¹, Yukiko Hara², Atsushi Masuda² (1.IRII, 2.AIST)

Keywords:PID (Potential induced degradation), Damp heat test

Crystalline silicon photovoltaic module was subjected to PID acceleration test for 20 hours following a DH test for 1000 hours. After that, the photovoltaic module was subjected to a DH test again for 1000 hours. The I-V characteristics suggest recovery of PID by heat during DH test again. On the other hand, the EL image is similar to that for the module subjected to only the DH test for 4000 hours. These results mean the possibility that both recovery of PID by heat and progress of degradation by DH occur simultaneously. It is also suggested that degradation by DH is possibly accelerated by PID prior to DH.