Extremely high growth rate MOVPE: GaAs growth for low-cost PV application

Hassanet Sodabanlu; Kentaroh Watanabe; Akinori Ubukata; Takeyoshi Sugaya; Masakazu Sugiyama; Yoshiaki Nakano

Presentation information

Symposium (Oral)

Symposium » Photovoltaic 4.0 - Next-generation renewable energy systems powered by high-efficiency, low-cost photovoltaics -

[16p-304-1~13] Photovoltaic 4.0 - Next-generation renewable energy systems powered by high-efficiency, low-cost photovoltaics -

Thu. Mar 16, 2017 1:00 PM - 6:00 PM 304 (304)

Syuhei Yagi(Saitama Univ.), Masakazu Sugiyama(Univ. of Tokyo), Kentaroh Watanabe(Univ. of Tokyo)

2:15 PM - 2:30 PM

▲ [16p-304-4] Extremely high growth rate MOVPE: GaAs growth for low-cost PV application

〇Hassanet Sodabanlu¹, Kentaroh Watanabe¹, Akinori Ubukata², Takeyoshi Sugaya³, Masakazu Sugiyama⁴, Yoshiaki Nakano⁴ (1.RCAST, Univ. Tokyo, 2.Taiyo Nippon Sanso Corp., 3.AIST, 4.School Eng. Univ. Tokyo)

Keywords:MOVPE, high growth rate, solar cell

Ultra-fast GaAs growth by MOVPE has been demonstrated with a GR upon 90 µm/h. The GaAs GR linearly depended on the TMGa flow, which the GR saturation was barely observed. GaAs p-n solar cells grown with GR of 19 µm/h exhibited good performance and excellent uniformity. To utilize an extremely fast GR, further investigations are required in order to improve quality of epitaxial layers.