[16p-304-1~13] Photovoltaic 4.0 －高効率・低コスト太陽光発電がもたらす次世代再生可能エネルギーシステム－

▲ [16p-304-4] Extremely high growth rate MOVPE: GaAs growth for low-cost PV application

〇ソダーバンル ハッサネット¹、渡辺 健太郎¹、生方 映徳²、菅谷 武芳³、杉山 正和⁴、中野 義昭⁴ (1.東大先端研、2.大陽日酸(株)、3.産総研、4.東大院工)

キーワード：MOVPE, high growth rate, solar cell

Ultra-fast GaAs growth by MOVPE has been demonstrated with a GR upon 90 µm/h. The GaAs GR linearly depended on the TMGa flow, which the GR saturation was barely observed. GaAs p-n solar cells grown with GR of 19 µm/h exhibited good performance and excellent uniformity. To utilize an extremely fast GR, further investigations are required in order to improve quality of epitaxial layers.