[16p-315-1~11] Recent GFIS microscopy technology and its future prospects for R & D of materials and devices

▲ [16p-315-3] Mask Repair Technology using Gas Field Ion Source

〇Anto Yasaka^1,2, Fumio Aramaki¹, Tomokazu Kozakai¹, Osamu Matsuda¹ (1.Hitachi High-Tech Science, 2.Hitachi High-Technologies)

Keywords:focused ion beam, gas field ion source, mask repair

We developed a new ion beam based mask repair system using a gas field ion source (GFIS). For conventional photomasks, nitrogen ions were used to repair defects, while hydrogen ions were used for EUVL masks. We evaluated the performance of the mask repair system on MoSi based phase shift masks and EUV masks. The results demonstrate that GFIS technology is a reliable solution of repairing defects on high end photomasks for 1Xnm generation and beyond.