2017年第64回応用物理学会春季学術講演会

講演情報

シンポジウム(口頭講演)

シンポジウム » GFIS(電界電離ガスイオン源)ガスイオン顕微鏡技術とその材料・デバイス研究開発への応用:現状と今後の展望

[16p-315-1~11] GFIS(電界電離ガスイオン源)ガスイオン顕微鏡技術とその材料・デバイス研究開発への応用:現状と今後の展望

2017年3月16日(木) 13:15 〜 18:00 315 (315)

水田 博(北陸先端大)、小川 真一(産総研)

16:15 〜 16:45

[16p-315-8] Nanofabrication of superconducting devices with focused helium ion irradiation

Cybart Shane1 (1.UC Riverside)

キーワード:Superconductor, Helium ion microscope, nanofabrication

The 1987 discovery of high-TC superconductivity in ceramic materials at temperatures around 90 K set off a frenzy of research in the development of high-TC electronics, motivated by the prospects of electronics operating in liquid nitrogen at 77K opposed to 4 K liquid helium. Unfortunately, it was soon discovered that these new materials were much more difficult to process than conventional metal superconductors. High-TC materials are very anisotropic and the superconducting properties vary along the different crystallographic directions which complicates manufacturing of the basic building blocks of superconducting electronics: Josephson junctions. Furthermore, the length scale of superconductivity in high-TC ceramics is very short compared to low-TC metals. Recently, my group has demonstrated a new scalable nanomanufacturing method of high-TC electronics using the finely focused beam from a helium ion microscope, which has the potential to deliver large numbers of high-quality circuits while at the same time reducing their costs by orders of magnitude. I will present some of the novel characteristics and applications of this new remarkable technology.