The 64th JSAP Spring Meeting, 2017

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Symposium (Oral)

Symposium » Recent GFIS microscopy technology and its future prospects for R & D of materials and devices

[16p-315-1~11] Recent GFIS microscopy technology and its future prospects for R & D of materials and devices

Thu. Mar 16, 2017 1:15 PM - 6:00 PM 315 (315)

Hiroshi Mizuta(JAIST), Shinichi Ogawa(AIST)

4:45 PM - 5:15 PM

▲ [16p-315-9] Direct nano-patterning of graphene by Anderson localization

〇Yuichi Naitou1, Sinichi Ogawa1 (1.AIST)

Keywords:Helium ion micropcopy, Anderson localization, graphene

Irradiation of single-layer graphene (SLG) with accelerated helium ions (He+) controllably generates defect distributions, which create a charge carrier scattering source within the SLG. We report direct experimental observation of metal-insulator transition in SLG on SiO2/Si substrates induced by Anderson localization. This transition was investigated using scanning capacitance microscopy (SCM) by monitoring the He+ dose conditions on the SLG.