[16p-315-1~11] GFIS（電界電離ガスイオン源）ガスイオン顕微鏡技術とその材料・デバイス研究開発への応用：現状と今後の展望

▲ [16p-315-9] Direct nano-patterning of graphene by Anderson localization

〇内藤 裕一¹、小川 真一¹ (1.産総研)

キーワード：Helium ion micropcopy, Anderson localization, graphene

Irradiation of single-layer graphene (SLG) with accelerated helium ions (He⁺) controllably generates defect distributions, which create a charge carrier scattering source within the SLG. We report direct experimental observation of metal-insulator transition in SLG on SiO₂/Si substrates induced by Anderson localization. This transition was investigated using scanning capacitance microscopy (SCM) by monitoring the He⁺ dose conditions on the SLG.