[16p-412-1~20] 13.5 Semiconductor devices and related technologies

[16p-412-11] N-type impurity doping into Ge from Spin On Glass for Tunneling FETs

〇Ryotaro Takaguchi¹, Ryo Matsumura^2,3, Takumi Katoh², Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, Faculty of Eng., 2.The Univ. of Tokyo, School of Eng., 3.JSPS Research Fellow)

Keywords:Ge, Spin On Glass, Tunneling FET

To improve p-type Ge TFET performance, realizing n+p junction with low defects and steep impurity profile is important. Junction properties were experimentally investigated as a function of n-type impurities (P, As, Sb) on Ge substrates using Spin On Glass (SOG). We clarified P had much steeper impurity profile than As or Sb and demonstrated n+p junction with low defects and very steep impurity profile (~10nm/dec.).