Ultra Thin Body Ge on Insulator by HEtero-Layer Lift-Off (HELLO) Technique

Tatsuro Maeda; W. H. Chang; Toshifumi Irisawa; Hiroyuki Ishii; Hiroyuki Hatter; Yuchi Kurashima; Hideki Takagi; Noriyuki Unhida

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[16p-412-1~20] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 1:15 PM - 6:30 PM 412 (412)

Keiji Ikeda(TOSHIBA), Masaharu Kobayashi(Univ. of Tokyo)

4:15 PM - 4:30 PM

[16p-412-12] Ultra Thin Body Ge on Insulator by HEtero-Layer Lift-Off (HELLO) Technique

〇Tatsuro Maeda¹, W. H. Chang¹, Toshifumi Irisawa¹, Hiroyuki Ishii¹, Hiroyuki Hatter¹, Yuchi Kurashima¹, Hideki Takagi¹, Noriyuki Unhida¹ (1.AIST)

Keywords:Germanium

We present high quality ultra thin Germanium (Ge) layer transfer on insulator substrates utilizing the hetero-layer lift-off (HELLO) technique. We clarified that the transferred ultra-thin-body (UTB) Ge layers retain the high quality down to ~ 1nm in wafer scale. This advanced Ge layer transfer technique enables us to demonstrate UTB-GeOI nMOSFETs with 4nm-thick body.