Contact Resistance and annealing dependence of sputter deposited thin MoS<sub>2</sub> film

Mayato Toyama; Takumi Ohashi; Kentaro Matsuura; Jun'ichi Shimizu; Iriya Muneta; Kuniyuki Kakushima; Kazuo Tsutsui; Hitoshi Wakabayashi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[16p-412-1~20] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 1:15 PM - 6:30 PM 412 (412)

Keiji Ikeda(TOSHIBA), Masaharu Kobayashi(Univ. of Tokyo)

6:00 PM - 6:15 PM

[16p-412-19] Contact Resistance and annealing dependence of sputter deposited thin MoS₂ film

〇Mayato Toyama¹, Takumi Ohashi¹, Kentaro Matsuura¹, Jun'ichi Shimizu¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyotech)

Keywords:Molybdenum disulfide contact resistance

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Presentation information

[16p-412-1~20] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

[16p-412-19] Contact Resistance and annealing dependence of sputter deposited thin MoS2 film

[16p-412-19] Contact Resistance and annealing dependence of sputter deposited thin MoS₂ film