[16p-412-1~20] 13.5 Semiconductor devices and related technologies

[16p-412-9] Enhancement of I_ON of GeOI TFETs using low energy BF₂ ion implantation

〇Takumi Katoh¹, Ryo Mathumura^1,2, Ryotaro Takaguchi¹, Mithuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo, 2.JSPS Research Fellow)

Keywords:TFET, Ge, BF2

GeOI (Ge - On - Insulator) TFETs are expected to have both high ON current and steep subthreshold slope (S.S.). Source engineering is especially important which directly changes tunneling phenomena between source and channel regions. It is suggested that increasing the impurity concentration of the source and steepening the impurity distribution should reduce the tunnel distance and improve the ON current of GeOI TFET. In this study, we realized 6 nm /dec B distribution by BF₂ implantation with its energy optimization. GeOI TFET fabricated with engineered BF₂ ion implantation recorded 10 times higher ON current and 30% steeper S.S. than TFET fabricated with conventional B ion implantation.