The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[16p-412-1~20] 13.5 Semiconductor devices and related technologies

6.1と13.3と13.5のコードシェアセッションあり

Thu. Mar 16, 2017 1:15 PM - 6:30 PM 412 (412)

Keiji Ikeda(TOSHIBA), Masaharu Kobayashi(Univ. of Tokyo)

3:15 PM - 3:30 PM

[16p-412-9] Enhancement of ION of GeOI TFETs using low energy BF2 ion implantation

Takumi Katoh1, Ryo Mathumura1,2, Ryotaro Takaguchi1, Mithuru Takenaka1, Shinichi Takagi1 (1.Univ. of Tokyo, 2.JSPS Research Fellow)

Keywords:TFET, Ge, BF2

GeOI (Ge - On - Insulator) TFETs are expected to have both high ON current and steep subthreshold slope (S.S.). Source engineering is especially important which directly changes tunneling phenomena between source and channel regions. It is suggested that increasing the impurity concentration of the source and steepening the impurity distribution should reduce the tunnel distance and improve the ON current of GeOI TFET. In this study, we realized 6 nm /dec B distribution by BF2 implantation with its energy optimization. GeOI TFET fabricated with engineered BF2 ion implantation recorded 10 times higher ON current and 30% steeper S.S. than TFET fabricated with conventional B ion implantation.