[16p-502-1~10] Process technology for advanced power semiconductor devices

[16p-502-3] Design of Thermal Oxidation Processes for the Control of MOS Interface Properties on 4H-SiC

〇Koji Kita¹ (1.Univ. of Tokyo)

Keywords:4H-SiC, thermal oxidation

Improvement of MOS interface characteristics by the control of SiC thermal oxidation processes is one of the critical issues of 4H-MOSFET technologies. In this presentation we will discuss the relationship between the MOS interface properties and oxidation conditions from two aspects: the selection of the oxidation conditions which is themodyanamically favorable for the suppression of interface defect generation, and the selection of crystal faces and oxidants (dry/wet oxidation) to change the near-interface strained structures of SiO₂ significantly.