[16p-502-1~10] Process technology for advanced power semiconductor devices

[16p-502-7] Ion Implantation into GaN and Its Application to Power Devices

〇Tohru Nakamura^1,2, Tomoyoshi Mishima¹, Kiyoji Ikeda¹, Michitaka Yoshino¹ (1.Hosei Univ, 2.Nagoya Univ)

Keywords:GaN, Ion implantation, MISFET

Ion implanted GaN MISFETs were fabricated on Mg doped epitaxial layer(1x10¹⁸ cm^-3 ) grown on free-standing GaN substrate. Vth of 9 V was obtained for the device with a gate length of 2 μm. P-type conversion of n-GaN by Mg-ion implantation was performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics.