Precise etching technique for InGaN/GaN nanostructure LEDs by combination of saturated ozone water oxidation and buffered oxide etching

Kohei Ogawa; Shun Ishijima; Yusuke Namae; Akihiro Matsuoka; Tomoya Mizutani; Akihiko Kikuchi

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-503-1~15] 15.4 III-V-group nitride crystals

Thu. Mar 16, 2017 1:45 PM - 6:00 PM 503 (503)

Kazunobu Kojima(Tohoku Univ.), Hiroto Sekiguchi(Toyohashi University of Technology), Akihiko Kikuchi(Sophia University)

1:45 PM - 2:00 PM

[16p-503-1] Precise etching technique for InGaN/GaN nanostructure LEDs by combination of saturated ozone water oxidation and buffered oxide etching

〇Kohei Ogawa¹, Shun Ishijima¹, Yusuke Namae¹, Akihiro Matsuoka¹, Tomoya Mizutani¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:Gallium nitride, Nanostructure, Etching

We investigated the possibility of precise etching of nitride semiconductor nanostructures combining the formation of surface oxide film (Ga₂O₃) with saturated ozone water (SOW) and the oxide film etching (BOE) with buffered hydrofluoric acid.