Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-503-1~15] 15.4 III-V-group nitride crystals

Thu. Mar 16, 2017 1:45 PM - 6:00 PM 503 (503)

Kazunobu Kojima(Tohoku Univ.), Hiroto Sekiguchi(Toyohashi University of Technology), Akihiko Kikuchi(Sophia University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[16p-503-1] Precise etching technique for InGaN/GaN nanostructure LEDs by combination of saturated ozone water oxidation and buffered oxide etching

〇Kohei Ogawa¹, Shun Ishijima¹, Yusuke Namae¹, Akihiro Matsuoka¹, Tomoya Mizutani¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

2:00 PM - 2:15 PM

[16p-503-2] Effect of ammonia gas introduction on the shape of InGaN / GaN nanostructures fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇(B)Akihiro Matsuoka¹, Tomoya Mizutani¹, Shun Ishijima¹, Kohei Ogawa¹, Yusuke Namae¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

2:15 PM - 2:30 PM

[16p-503-3] Fabrication of position controlled InGaN/GaN quantum well ultrafine nanopillar fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇(B)Yusuke Namae¹, Tomoya Mizutani¹, Shun Ishijima¹, Kohei Ogawa¹, Akihiro Matsuoka¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

2:30 PM - 2:45 PM

△ [16p-503-4] Feasibility study on limited area formation of GaN nanowires

〇Minoru Takebayashi¹, Yuki Kurisaki¹, Hiroki Shibuya¹, Myunghee Kim¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Nagoya Univ.)

2:45 PM - 3:00 PM

△ [16p-503-5] Influence of Fermi-pinning on electrical characteristics of regularly arranged GaN nanocolumns

〇Yohei Nakagawa¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

3:15 PM - 3:30 PM

[16p-503-6] Structural and optical properties in InGaN/GaN single quantum wells on GaN nanocolumns

〇Takao Oto¹, Yutaro Mizuno¹, Jun Yoshida¹, Ai Yanagihara¹, Rin Miyagawa¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

3:30 PM - 3:45 PM

△ [16p-503-7] Enhanced light emission from regularly arrayed InGaN/GaN nanocolumns due to surface plasmon coupling

〇Kazuma Kikuchi¹, Takao Oto¹, Koichi Okamoto³, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech., 3.Kyushu Univ.)

3:45 PM - 4:00 PM

[16p-503-8] Optical properties and microcavities of InGaN/GaN nanoumbrella crystals

〇Tetsuya Kouno¹, Masaru Sakai², Katsumi Kishino³, Akihiko Kikuchi³, Naoki Umehara¹, Kazuhiko Hara¹ (1.Shizuoka Univ., 2.Univ. of Yamanashi, 3.Sophia Univ.)

4:00 PM - 4:15 PM

[16p-503-9] Fabrication of regularly arrayed GaN nanocolumn on Silicon and Sapphire substrates

〇Yukimasa Higashi¹, Sekiguchi Hiroto¹, Yamane Keisuke¹, Okada Hiroshi^2,1, Wakahara Akihiro¹, Kishino Katsumi³ (1.Toyohashi Univ. Tech., 2.EIIRIS, 3.Sophia Univ.)

4:15 PM - 4:30 PM

[16p-503-10] Fabrication of nanocolumn LED with Eu-doped GaN active region grown by RF-MBE

〇Ryosuke Matsuzaki¹, Sekiguchi Hiroto¹, Imanishi Tomohiko¹, Ozaki Kohei¹, Keisuke Yamene¹, Okada Hiroshi^2,1, Kishino Katsumi³, Wakahara Akihiro^1,2 (1.Toyohashi Univ., 2.EIIRIS, 3.Sophia Univ.)

4:45 PM - 5:00 PM

[16p-503-11] Fabrication of InGaN/GaN Nanowires by Thermal Decomposition

〇Munetaka Arita¹, Yasuhiko Arakawa^1,2 (1.NanoQunie, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

5:00 PM - 5:15 PM

▲ [16p-503-12] Power dependent single photon emission dynamics of a GaN fluctuation quantum dot

〇(D)Kang Gao¹, Mark Holmes^1,2, Munetaka Arita^1,2, Yasuhiko Arakawa^1,2 (1.IIS, 2.NanoQuine, Univ. of Tokyo)

5:15 PM - 5:30 PM

[16p-503-13] Considerations of inverted pyramid III-nitride QDs

〇Mark Holmes¹, Arakawa Yasuhiko^1,2 (1.UTokyo IIS, 2.UTokyo NanoQUINE)

5:30 PM - 5:45 PM

[16p-503-14] Study on electrical properties characterization of InN epilayer using THz ellipsometry

〇(B)Kenta Morino¹, Kouhei Tachi¹, Takashi Fujii^1,3, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹, Takeshi Nagashima², Toshiyuki Iwamoto³, Yukinori Sato³ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP.)

5:45 PM - 6:00 PM

[16p-503-15] Evaluation of alpha particle detection property by GaN diodes at each irradiation conditions

〇Takayuki Nakano¹, Takuya Arikawa¹, Hisaya Nakagawa², Shigeyoshi Usami³, Maki Kushimoto³, Yoshio Honda^3,4, Hiroshi Amano^3,4,5, Sebastian Schuett⁶, Adrian Vogt⁶, Michael Fiederle⁶, Hidenori Mimura⁷, Yoku Inoue¹, Toru Aoki⁷ (1.Shizuoka Univ., 2.Graduate School, Shizuoka Univ., 3.Nagoya Univ., 4.IMaSS-Nagoya Univ., 5.Akasaki Research Center, 6.Univ. of Freiburg, 7.R.I.E. Shizuoka Univ)

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