[16p-503-1~15] 15.4 III-V-group nitride crystals

[16p-503-15] Evaluation of alpha particle detection property by GaN diodes at each irradiation conditions

〇Takayuki Nakano¹, Takuya Arikawa¹, Hisaya Nakagawa², Shigeyoshi Usami³, Maki Kushimoto³, Yoshio Honda^3,4, Hiroshi Amano^3,4,5, Sebastian Schuett⁶, Adrian Vogt⁶, Michael Fiederle⁶, Hidenori Mimura⁷, Yoku Inoue¹, Toru Aoki⁷ (1.Shizuoka Univ., 2.Graduate School, Shizuoka Univ., 3.Nagoya Univ., 4.IMaSS-Nagoya Univ., 5.Akasaki Research Center, 6.Univ. of Freiburg, 7.R.I.E. Shizuoka Univ)

Keywords:radiation detection, path length

We have proposed a novel neutron semiconductor detector using BGaN. In the system, the characteristics of alpha particle detection for GaN are important, but the evaluation of radiation detection property of GaN has not been sufficiently addressed so far. In this study, we evaluated alpha particle detection sensitivity by GaN pin-diodes. In vacuum and in air atmosphere, we have measured the energy spectra by multi-channel analyzer. We confirmed that the detection peak energy for alpha particle is modified by air damping. From these experimental results and simulations, we estimate that the range distance of alpha particles in GaN is about 3.4 um for neutron capture by BGaN.