[16p-503-1~15] 15.4 III-V-group nitride crystals

[16p-503-3] Fabrication of position controlled InGaN/GaN quantum well ultrafine nanopillar fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇(B)Yusuke Namae¹, Tomoya Mizutani¹, Shun Ishijima¹, Kohei Ogawa¹, Akihiro Matsuoka¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:semiconductor, nanostructure, etching

We focus on the thermal decomposition reaction of GaN in a low pressure hydrogen atmosphere and are studying Hydrogen Anisotropic Thermal Etching (HEATE) which is expected to be nanofabrication with low process damage. We have reported etch characteristics of the HEATE and fabrication of InGaN/GaN nanostructured LED etc. In the HEATE, etching is performed using SiO₂ as a mask, but if etching is performed for a long time, it is possible to form a finer structure than the mask size using over etching under the mask. In this report, we report the fabrication of a single ultrafine InGaN/GaN nanopillar structure position controlled by overetching.