The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

2 Ionizing Radiation » 2.2 Detection systems

[16p-E204-1~8] 2.2 Detection systems

Thu. Mar 16, 2017 1:30 PM - 3:30 PM E204 (E204)

Keitaro Hitomi(Tohoku Univ.)

1:45 PM - 2:00 PM

[16p-E204-2] Heavy ion beam monitoring using oxide semiconductors

Hiroaki Miyoshi1,2, Akihiro Koyama3, Yutaka Otaka3,4, Kenji Shimazoe3, Motoki Hirumi5, Munetaka Nitta5, Fumihiko Nishikido6, Taiga Yamaya6, Takao Onoye1, Hiroyuki Takahashi3 (1.Osaka Univ., 2.SHARP, 3.The Univ. of Tokyo, 4.Tokyo Metropolitan Univ., 5.Chiba Univ., 6.QST-NIRS)

Keywords:oxide semiconductor, heavy ion beam, IGZO

In order to monitor the beam shape of heavy ion beam with high resolution, a detector using oxide semiconductor was prototyped.
The detector was fabricated by forming photodiode and oxide semiconductor using a technique of forming semiconductor on glass.
We report the beam shape by irradiating the detector with a heavy ion beam.