[16p-E204-1~8] 2.2 Detection systems

[16p-E204-2] Heavy ion beam monitoring using oxide semiconductors

〇Hiroaki Miyoshi^1,2, Akihiro Koyama³, Yutaka Otaka^3,4, Kenji Shimazoe³, Motoki Hirumi⁵, Munetaka Nitta⁵, Fumihiko Nishikido⁶, Taiga Yamaya⁶, Takao Onoye¹, Hiroyuki Takahashi³ (1.Osaka Univ., 2.SHARP, 3.The Univ. of Tokyo, 4.Tokyo Metropolitan Univ., 5.Chiba Univ., 6.QST-NIRS)

Keywords:oxide semiconductor, heavy ion beam, IGZO

In order to monitor the beam shape of heavy ion beam with high resolution, a detector using oxide semiconductor was prototyped.
The detector was fabricated by forming photodiode and oxide semiconductor using a technique of forming semiconductor on glass.
We report the beam shape by irradiating the detector with a heavy ion beam.