The 64th JSAP Spring Meeting, 2017

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

2:30 PM - 2:45 PM

[16p-E206-4] A study on H2 concentration dependence on the Si surface flattening with Ar/H2 annealing and its device applications

〇Masahiro Tsukazaki1, Sohya Kudoh1, Shun-ichiro Ohmi1 (1.Tokyo Tech)

Keywords:flattening, annealing, MISFET

We had reported the improvement of MISFET electrical characteristics by Si surface flattening with Ar/4.9%H2 annealing. In this paper, we investigated H2 concentration dependence on the Si(100) surface flattening with Ar/H2 annealing.