The 64th JSAP Spring Meeting, 2017

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

3:30 PM - 3:45 PM

△ [16p-E206-7] Measurement of sample currents for investigation of self-compensation mechanism of X-ray induced charge-up on SiO2 surface

〇Takahiro Harie1,2, Daisuke Kobayashi2, Tomoyuki Yamamoto1, Kazuyuki Hirose1,2 (1.Waseda Univ., 2.ISAS/JAXA)

Keywords:XPS, charge-up, electron transport