Takahiro Harie

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Speaker, Author, Co-Author

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

3:30 PM - 3:45 PM

△ [16p-E206-7] Measurement of sample currents for investigation of self-compensation mechanism of X-ray induced charge-up on SiO2 surface

〇Takahiro Harie^1,2, Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose^1,2 (1.Waseda Univ., 2.ISAS/JAXA)