Evaluation of potential gradient and active dopant concentration in inversion layer formed in As implanted Si(001) by subband measurement using ARPES

Yudai Higa; Sakura Takeda; Tatsuya Ebato; Masatoshi Yoneda; Akiho Fujinaka; Kazuho Morita; Natsuki Morimoto; Artoni Kevin Ang; Hiroshi Daimon; Kazuo Tsutsui

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

3:45 PM - 4:00 PM

[16p-E206-8] Evaluation of potential gradient and active dopant concentration in inversion layer formed in As implanted Si(001) by subband measurement using ARPES

〇Yudai Higa¹, Sakura Takeda¹, Tatsuya Ebato¹, Masatoshi Yoneda¹, Akiho Fujinaka¹, Kazuho Morita¹, Natsuki Morimoto¹, Artoni Kevin Ang¹, Hiroshi Daimon¹, Kazuo Tsutsui² (1.Nara Institute of Science and Technology, 2.Tokyo Institute of Technology)

Keywords:ARPES, subband, Ion implantation