[16p-F203-1~15] 17.3 Layered materials

[16p-F203-12] Random telegraph signal in the time-dependent dielectric breakdown test for h-BN

〇Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio^1,3 (1.Tokyo Univ., 2.NIMS, 3.PRESTO-JST)

Keywords:hexagonal boron nitride, dielectric breakdown

Hexagonal boron nitride (h-BN) is considered as ideal layered insulator for graphene and other 2D material devises. In this research, the constant-voltage-stress was applied to the h-BN to clarify the degradation mechanism against the electrical stress. The h-BN endured the strong electrical field which is 75% of the dielectric breakdown strength for 1 hour. In addition, we have found that the current measured in the test is the random telegraph noise.