[16p-F203-1~15] 17.3 Layered materials

[16p-F203-3] Change in Electronic Property of Atomically-Thin Hetero-Interface System with Applied Electrode Bias

〇Kenji Iida¹, Masashi Noda¹, Katsuyuki Nobusada¹ (1.IMS)

Keywords:Hetero-inteface, First-principles calculation, Applied bias

The change in electronic properties of hetero-interface systems with an applied bias has been extensively investigated owing to the interest in developing electronic devices such as transistors and diodes. Recently, novel electronic devices are produced with hetero-interface systems consisting of 2D materials such as graphene. In this context, it is required to obtain basic insights into their electronic functions. In this study, we develop a first-principles computational approach for describing the electronic structure under an applied bias, and reveal the mechanism of the electronic structure change in a SiO₂-graphene-boron nitride hetero-interface system with an applied bias.