[16p-F204-1~15] CS.1 3.13/3.15 Code-sharing Session

[16p-F204-2] Epitaxial growth of IV-VI Semiconductors on Si substrate and application to mid-infrared lasers

〇Akihiro Ishida¹, Masanobu Sato¹, Hiroki Akikawa¹, Yui Aofuji¹, Seisuke Nakashima¹ (1.Shizuoka University)

Keywords:mid-infrared laser, IV-VI semiconductors, epitaxial growth

IV-VI semiconductors such as PbTe, PbSe, and PbS have direct gaps at L-points of the Brillouine zone, and they are useful for mid-infrared lasers with wavelength longer than 3μm. The probability of Auger nonradiative recombination is much smaller than those of III-V and II-VI compounds because of the almost symmetric band-edge structure in conduction and valence bands. We prepared the IV-VI semiconductor films on Si(111) substrates for the application to the mid-infrared lasers. Simple epitaxial growth method are presented and application to mid-infrared lasers are discussed.