Annealing temperature dependence of GaInAsP laser diode using wafer bonded InP/Si substrate

Yuya Onuki; Tetsuo Nishiyama; Naoki Kamada; Xu Han; Gandhi Kallarasan; Masaki Aikawa; Kazuki Uchida; Hirokazu Sugiyama; Natsuki Hayasaka; Kazuhiko Shimomura

Presentation information

Oral presentation

CS Code-sharing session » CS.1 3.13/3.15 Code-sharing Session

[16p-F204-1~15] CS.1 3.13/3.15 Code-sharing Session

Thu. Mar 16, 2017 1:45 PM - 6:45 PM F204 (F204)

Makoto Okano(AIST), Mitsuru Takenaka(Univ. of Tokyo), Yasuhiko Ishikawa(Univ. of Tokyo)

3:00 PM - 3:15 PM

[16p-F204-4] Annealing temperature dependence of GaInAsP laser diode using wafer bonded InP/Si substrate

〇Yuya Onuki¹, Tetsuo Nishiyama¹, Naoki Kamada¹, Xu Han¹, Gandhi Kallarasan¹, Masaki Aikawa¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:laser diode, direct bonding, InP/Si

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