[16p-F204-1~15] CS.1 3.13/3.15 Code-sharing Session

△ [16p-F204-5] Temperature dependences of membrane distributed-reflector laser on silicon substrate

〇(D)Takuo Hiratani¹, Daisuke Inoue¹, Takahiro Tomiyasu¹, Kai Fukuda¹, Tomohiro Amemiya², Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech., 2.IIR)

Keywords:semiconductor laser, distributed-reflector laser, membrane structure

The temperature dependences of membrane distributed-reflector laser on a Si substrate which showed low threshold current (0.29 mA) and relatively high differential quantum efficiency (23% from the front side) at 20 °C were measured. The sub-mA threshold current operation up to 90 °C was obtained under a continuous-wave condition. Further, single mode operation up to 80 °C was also obtained.