[16p-P3-1~23] 6.2 Carbon-based thin films

[16p-P3-14] Evaluation of doping concentration of diamond by Raman spectroscopy.

〇(M1C)Yuki Tsuchida¹, Koji Yamaguchi¹, Eiichi Kamei¹, Daisuke Fukunaga¹, Noboru Ohtani¹, Shinichi Shikata¹ (1.Kwansei Gakuin Univ.)

Keywords:semiconductor, diamond, raman spectroscopy

We have carried out mapping boron concentration with peak to originate from partial removal of the selection rules due to high-doping so far, but this time we examine by comparing about concentration distribution of p+ epitaxial film growth by HPHT and CVD. These have broad peak due to B doping respectively. Raman mapping of these peak indicate B-doped CVD epitaxial crystal gets uniformity in comparison with B-doped HPHT crystal.