[16p-P3-1~23] 6.2 Carbon-based thin films

[16p-P3-15] Crystallographic strain and dislocation of p+ diamond epitaxial layer

〇(M1)Koji Yamaguchi¹, Yuki Tsuchida¹, Yuki Tabuchi¹, Noboru Ohtani¹, Shinichi Shikata¹ (1.KWANGAKU Univ.)

Keywords:diamond, X-ray topography, semiconductor

In this paper, the strain and dislocation of p+ epitaxial layers on HPHT were investigated. The strain and defects of the film was measured by X-ray Reciprocal Space Mapping (RSM), X-ray Rocking curve (XRD), X-ray topography by SR X-ray (Kyusyu SLRC:BL09), and Raman spectroscopy. The dislocation lines usually observed in the crystallographic slip direction of <-110> on (111) and <110> on (1-11) and their equivalents. However, in this case, all the lines propagated to the <100> projected direction.