The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

12 Organic Molecules and Bioelectronics » 12.2 Characterization and Materials Physics

[16p-P5-1~17] 12.2 Characterization and Materials Physics

6.6と12.2のコードシェアセッションあり

Thu. Mar 16, 2017 1:30 PM - 3:30 PM P5 (BP)

1:30 PM - 3:30 PM

[16p-P5-13] Effects of bias stress and light illumination on OTFTs

Takashi Ota1, Yuki Aoki1, Nishiwaki Kota1, Yutaka Tokuda1, Hiroo Anan2, Tetsuya Katou2, Masayuki Katayama2 (1.Aichi Inst. of Tech., 2.DENSO CORP.)

Keywords:Organic semiconducor

We have characterized effects of bias stress and light illumination on OTFTs from the shift of threshold voltage (Vth) and current DLTS measurements. Vth shows a negative shift with bias stress, which indicates the introduction of positively charged species, provably due to trapping of holes. Partial recovery of bias-stress-induced shift of Vth at 300 K is observed due to the thermal emission of holes from filled traps. However, Vth never recovers to its initial one. It is found that complete recovery of bias-stress-induced shift of Vth occurs by blue LED light illumination at 300 K. The complete recovery by light illumination is caused by optical emission of holes from filled traps which never emit holes thermally at 300 K because of their high thermal activation energies. The current DLTS measurements are now being performed to clarify trap distributions which induce bias stress effect.