[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-11] Anomalous behavior of gate current observed in FN stressed SiC-MOSFETs

Takafumi Furuichi¹, Yoshiki Mihara¹, Kazuki Masuguchi¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

Keywords:SiC-MOSFET, FN stressing, FN current

Gate current behavior of commercially-available SiC-MOSFETS by FN stressing are investigated at RT and 200℃. At 200℃, an anomalous continuous increase in the current is observed. After rapid cooling to -60℃ to minimize recovery, the increase is remained. This observation is commonly observed with and without a treatment for electron detrapping. These phenomena are discussed based on tunneling coefficient calculation for electron or hole trapped MOS structures.