Evaluation of Filled Defect States for SiO<sub>2/</sub>4H-SiC grown by dry and N<sub>2</sub>O oxidation

Hiromasa Watanabe; Akio Ohta; Mitsuhisa Ikeda; Katsunori Makihara; Mori Daisuke; Yutaka Terao; Seiichi Miyazaki

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 17, 2017 9:00 AM - 12:15 PM 301 (301)

Mitsuru Sometani(AIST)

10:45 AM - 11:00 AM

[17a-301-7] Evaluation of Filled Defect States for SiO_2/4H-SiC grown by dry and N₂O oxidation

〇Hiromasa Watanabe¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Mori Daisuke², Yutaka Terao², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Fuji Electric Co., Ltd.)

Keywords:4H-SiC, Insulator, Photoemission Spectroscopy

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[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-7] Evaluation of Filled Defect States for SiO2/4H-SiC grown by dry and N2O oxidation

[17a-301-7] Evaluation of Filled Defect States for SiO_2/4H-SiC grown by dry and N₂O oxidation