[17a-313-1~10] 8.4 Plasma etching

[17a-313-5] Effects of Additive Gases on Characteristics of Low Damage Plasma Etching
of GaN in Cl2 Based Plasma at High Temperature

〇Masato Imamura¹, Liu Zecheng¹, Pan Jialin¹, Nanide Atsushi³, Ishikawa Kenzi¹, Takeda Keigo¹, Kondo Hiroki¹, Oda Osamu¹, Sekine Makoto¹, Hori Masaru² (1.Nagoya Univ., 2.Nagoya Univ. Inst. Innovation for Future Society, 3.SCREEN Holdings)

Keywords:semiconductor, Plasma Etching, Gallium nitride