The 64th JSAP Spring Meeting, 2017

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Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[17a-313-1~10] 8.4 Plasma etching

Fri. Mar 17, 2017 9:00 AM - 11:30 AM 313 (313)

Koji Eriguchi(Kyoto Univ.)

11:00 AM - 11:15 AM

[17a-313-9] Fabrication of Ge Fin Structure by Neutral Beam Etching

〇Shuichi Noda1, Wataru Mizubayashi2, Akiou Kikuchi1, Kazuhiko Endo2, Seiji Samukawa1,2 (1.Tohoku Univ., 2.AIST)

Keywords:Ge FinFET, Neutral Beam Etching, UV Damage