[17a-313-1~10] 8.4 Plasma etching

[17a-313-10] Surface Reaction Analysis of SiN Etching with Hydrogen Radicals using MD Simulation

〇RYOKO SUGANO¹, MICHIRO ISOBE², SATOSHI HAMAGUCHI² (1.Hitachi R&D Group, 2.Osaka Univ.)

Keywords:SiN etching, hydrogen radical, Molecular Dynamic Simulation